摘要
对中低分辨率CMOS闪烁型模数转换器的四个主要模块的折中设计进行了研究。这些折中考虑包括基准电压的非理想因素、前置放大器的折中六边形思考、再生比较器的滞回作用、误差更正电路。在模块折中设计研究的基础上,CMOS闪烁型模数转换器可达到高性能和低功耗。根据这种设计考虑,采用TSMC0.25μmCMOS单层多晶硅五层金属工艺实现了一个4bit65MHz的高转换率的闪烁型模数转换器。
Trade-off designs of four prime modules in Low-to-moderate resolution CMOS Flash ADC are investigated. Trade-off considerations include reference voltages nonidealities, preamplifier trade-off hexagon, regenerative comparator hysteresis and error correction. Based on the trade-off design of each module, the proposed CMOS Flash ADC gets extreme combination of high performances and low cost. According to design considerations, a 4 bit 65 MHz high slew rate Flash ADC is implemented using TSMC 0. 25 μm CMOS single-poly five-metal process.
出处
《电子器件》
CAS
2008年第5期1466-1471,共6页
Chinese Journal of Electron Devices
基金
2006年浙江省重大科技项目软件与集成电路专项资助
关键词
模数转换器
闪烁型
折中
转换率
滞回作用
Analog-to-digital converter (ADC)
Flash
Trade-off
Slew rate
Hysteresis