NMOS管热载流子衰退效应评价模型及寿命预测方法研究

Evaluating Model of Hot Carrier and Lifetime Estimating of NMOSFET

热载流子是器件可靠性研究的热点之一。特别对于亚微米器件,热载流子失效是器件失效的一个最主要方面。通过对这种失效机理及其失效模型的研究,为设计和工艺提供帮助,从而有效降低由热载流子引起的电路失效,提高电路可靠性。本文主要针对几种典型工艺的栅氧厚度(例如:Tox分别为150、200、250)的NMOSFET进行加速应力实验,提取寿命模型的相关参数,估算这些器件在正常工作条件下的寿命值,对亚微米工艺器件寿命进行快速评价。

Hot-carrier is a hotspot in device reliability research. Hot-carrier mostly induced device degradation espedally for sub-micron process. It is very useful for design and process manufacture by the researching of failure mechanism and model. In this paper, for different NMOSFET with different gate oxide thickness, we did accelerate stressing experiments at steady process line. Using the related model parameters picked up, we can estimate the lifetime of these devices at normal working conditions and evaluate this process＇ hot carrier effect exactly.