场效应管X射线剂量增强的实验测量

Experimental measurement of X-ray dose enhancement factor for field effect transistor

为了实验精确测量场效应管的X射线剂量增强系数,介绍了如何改进剂量增强系数实验测量的方法和实验测量装置,以及实验测量的详细过程。得到了两种不同类型场效应管的辐照数据,根据实验数据计算了其剂量增强系数。剂量增强效应十分明显,IRF540场效应管在阈电压1.5 V时相对剂量增强系数为16,IRF9530要小些,在阈电压为4 V时相对剂量增强系数约7.5。

In order to measure the X-ray dose enhancement factor （DEF） of the field effect transistor（FET） accurately through experiment, it was introduced how to improve the measuring method and the experimental measuring devices in this article, and the detail process of experimental measurement was described too. The irradiation data of two types of FETs were obtained, and their DEFs of these FETs were calculated according to these data. The results indicated the dose enhancement effects of these FETs were very obvious. The relative DEF of IRF540 FET was 16 under a 1.5 V threshold voltage, and that of IRF9530 FET was relatively small, it was 7.5 under a 4V threshold voltage.