摘要
本文采用射频反应溅射法在电阻瓷体表面和微晶玻璃片上淀积一层具有择优取向的A1N薄膜,然后再在其上淀积金属电阻膜(80％Ni,20％Cr)或Fe-Al-Si-Cr合金粉。对电阻器进行了功率老化、高温存贮、热冲击、短时过载等可靠性试验,测量了其TCR和表面温升。由于A1N材料的优良导热和钝化特性,使具有A1N薄膜的电阻器性能得到很大提高。文中还讨论了A1N材料改善电阻器特性的微观机理。
A layer of C-axis preferably-oriented AlN film was first deposited on the ceramic substrate and crystallite glass by R. F. sputtering, and then metal resistor membrane with 80% Ni, 20% Cr or alloypowder Fe-Al-Si-Cr was evaporated on them. Power aging, storage at high temperature, thermal impact and short-time overloading were carried out for the metal film resistors with the temperature coefficient and surface temperature rise of resistors measured. Because of the excellent thermal conductivity and passivity of AlN, the performance of resistors with AlN film is significantly improved. The microscopic mechanism of the effect of AlN on resistor performance is discussed.
出处
《华中理工大学学报》
CSCD
北大核心
1990年第1期127-132,共6页
Journal of Huazhong University of Science and Technology
