摘要
对双极晶体管结构和关键性能参数进行了研究和设计,并进行了流片测试。介绍了器件工艺步骤及其采用的工艺结构。对器件的特征频率、Gummel曲线、发射极电子和空穴浓度、CE击穿特性模拟、-βIC曲线等关键参数进行了模拟。模拟器件最高特征频率为10 GHz,流片测试最高特征频率为9.5 GHz。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested. The process steps and the structure were introduced. The frequency characteristics, Gummel curve, electron and hole concentration of emitter, simulation of CE breakdown properties,β-Ic curve, and other key parameters were simulated. The simulation fmax is 10 GHz, and the fmax of the final chip is 9.5 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第9期780-783,共4页
Semiconductor Technology
基金
聊城大学东昌学院高科技发展项目
关键词
双极晶体管
特征频率
双层多晶硅
增益
bipolar transistor
characteristic frequency
double-polysilicon
gain
