功率场效应晶体管晶圆超薄磨片工艺开发

Power MOSFET Ultra Thin Wafer Grinding Process Development

晶圆超薄磨片工艺是为减小功率开关管导通电阻,工艺中存在超薄晶圆磨片后转运过程中破片及超薄晶圆背面蒸镀金属等问题。现有的晶圆磨片的一般厚度为200μm,超薄磨片的目标是100μm。本研究采用同一批次晶圆,分批,2片超薄研磨,其他采用正常工艺减薄,封装测试条件相同。对比封装测试完毕的器件的导通电阻,超薄研磨器件的导通电阻减小约10%。

Ultra thin wafer process is to reduce the resistance of power MOSFET. The main challenge for is that it is easy to break and the wafer backside metal evaporation process handling. Current power MOSFET wafer grinding thickness is 200 μm . Ultra thin wafer is about 100 μm. Two wafers are separated to do ultra thinning process, others apply normal grinding process. Comparing the finished goods, the resistance of ultra thin wafer is lower about 10%.