Si中场致光整流效应的研究

Research of Field-Induced Optical-Rectification Effect of Si Material

通过观测Si/Al肖特基势垒受光照时产生的光生电压与光波偏振方向和晶向的变化关系,发现了光生电压的各向异性规律,即光敏面不同点处光敏特性不同,并且有一定规律。经理论分析和实验数据曲线拟和,认为这是由于金属和半导体接触形成势垒,产生内建电场,电场的存在使晶体对称性被破坏,产生二阶非线性效应的光整流,光整流产生的直流电场又与内建电场相互作用的结果。

The relationship curve between the photovohage and the light direction of polarization in different orientations of crystal when the Si/Al Schottky barrier potential was illuminated. The photovohage aeolotropic rule through the experiment was found. There was different optical sensitivity features in different points of optical sensitivity plane, and had a certain rule. Through the theoretical analysis and fitting curves with experimental data, the reason of this is due to the contact barrier between metal and semiconductor, and the result of self-build field destroyes the crystal symmetry, produces second-order nonlinear optical-rectification effect, and affects the direct-current field which is induced by the optical-rectification effect.