摘要
Bi2S3 single crystals were grown by using a modification of Bridgman method. Measurements of the electrical conductivity, Hall effect and thermoelectric power （TEP） were preformed in two crystallographic directions （parallel and perpendicular to the c-axis）. The measurements showed that the electrical conductivity, Hall mobility, and Seebeck coefficient have anisotropic nature. From these measurements some physical parameters were estimated and the crystals showed n-type of conduction mechanism. Also, values of the energy gap were found to be different in the two directions.
Bi2S3 single crystals were grown by using a modification of Bridgman method. Measurements of the electrical conductivity, Hall effect and thermoelectric power （TEP） were preformed in two crystallographic directions （parallel and perpendicular to the c-axis）. The measurements showed that the electrical conductivity, Hall mobility, and Seebeck coefficient have anisotropic nature. From these measurements some physical parameters were estimated and the crystals showed n-type of conduction mechanism. Also, values of the energy gap were found to be different in the two directions.
