非晶硅锗/非晶硅超晶格红外敏化感光体的研究

Study On the a-SiGeX∶H/a-Si∶H Multilayer Near-infrared Sensitive Photoreceptors

本文详细研究了非晶硅锗／非晶硅（ａ－ＳｉＧｅｘ：Ｈ／ａ－Ｓｉ：Ｈ）超晶格材料作为电荷产生层和非晶硅氮（ａ－ＳｉＮｘ：Ｈ）作为电荷输运层的近红外敏化的新型感光体。光电测量、光衰减特性测量（ＰＩＤ）和渡越时间法测量（ＴＯＦ）等结果表明：电荷产生层和电荷输运层之间的异质界面性质严重影响感光体的性能，具有良好异质界面的感光体有优异的光衰减特性；感光体的表面荷电能力大于２５Ｖ／μｍ，半暗衰减时间大于１０秒，半光衰时间小于０１秒，残余电位约等于零；感光体对近红外光（７５０ｎｍ～８００ｎｍ）的光敏性（Ｅ１／２）优于普通非晶硅感光体的光敏性。因而，这种新型感光体可望用于激光打印机中。

The near-in frared sensitive photoreceptor with a-SiGeX:H/a-Si:H multilayer as the Charge Generation Layer(CGL)and a-SiNX:H as the Charge Transport Layer (CTL)has been studied in detail.The electrophotographic measurements、PID and TOF results show that the property of the photoreceptor was be greatly affected by the heterophase contact between the CGL and CTL. Those photoreceptors with fine heterophase contact have excellent PID charateristics,such as surface charge reception of more than 25v/μm,half dark decay time more than 10 seconds and half photo decay time less than 0.1 second without a marked residual voltage.The photosensitivity of the photoreceptor to the near-infrared light(750nm-800nm)is much higher than that of the conventional aSi:H photoreceptor.So,this kind of photoreceptor is seen to be used in the laser printer.