摘要
采用固相扩散法在n-Si(100)衬底上制备了两组退火条件不同的SixGe1-x薄膜。利用椭圆偏振光谱和二次离子质谱技术,对薄膜的厚度及组分分布进行了表征,两者具有较好的一致性。分析了退火对薄膜厚度、组分和应变的影响。成功得到了完全驰豫状态的SixGe1-x薄膜,可用于实际器件制作。
SixGe1-x thin film was fabricated on n-Si （100） substrate by using solid-diffusing, The samples were annealed at different temperatures for different durations to investigate temperature and time effects on thickness and composition distribution. Physical properties of SixGe1-x layer, characterized by spectroellipsometry（SE） and secondary ion mass spectrum（SIMS）, were in good agreement. The dependence of relaxation on annealing was also studied. As a result, SixGe1-x film used for strained-Si device was successfully obtained.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第5期660-662,683,共4页
Microelectronics
