摘要
从晶体管器件模型出发,对两种常用的LNA电路结构进行了分析,提出了一种60GHz LNA电路结构。该电路使用级间电感匹配的方式,可以有效地提高电路的增益并降低噪声;同时,结合先进的生产工艺,对电路的匹配网络进行了设计和优化,充分利用直流偏置网络,简化输入输出匹配网络;使用最简单的电路结构,获得了较高的增益指标和较低的功耗。
Two common circuit structures of low noise amplifier(LNA) were analyzed based on device model, and a circuit structure of a 60 GHz LNA was proposed. Inductance matching between two stages was used in the circuit to improve gain and reduce noise effectively. The circuit was designed and optimized based on an advanced SiGe BiCMOS process. Simple input and output matching networks were implemented by using DC bias network. With this simple structure, the circuit achieved a high gain and lower power.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第5期718-721,共4页
Microelectronics
关键词
低噪声放大器
单片微波集成电路
匹配网络
Low Noise Amplifier (LNA)
Monolithic Microwave IC (MMIC)
Matching network