摘要
In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.
In this paper, ZnO films are deposited on freestanding thick diamond films （FTDF） by plasma-assisted metal organic chemical vapour deposition （MOCVD）. Diethyl zinc （DEZn）, O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction （XRD）, Hall measurements and electron probe microanalysis （EPMA）. Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.
基金
Supported by the National Natural Science Foundation of China (Grant No. 60307002)
