期刊文献+

超声椭圆振动-化学机械复合抛光硅片实验研究 被引量:2

Experimental investigation of silicon wafer hybrid polishing by UEV-CMP
下载PDF
导出
摘要 在研制超声椭圆振动-化学机械复合抛光硅片实验装置基础上,进一步开展了抛光压力P,抛光点速度v及抛光液供给量Q等可控工艺参数对硅片抛光表面粗糙度、表面形貌和材料去除率影响的有无超声椭圆振动辅助抛光的对比实验研究.实验结果表明:抛光工具的超声椭圆振动有利于抛光垫保持良好的表面形貌和抛光区获得良好的工作状况,提高硅片材料的去除率;抛光压力对抛光质量的影响最大,抛光速度次之,抛光液供给量影响最小;在最佳抛光效果情况下,可使硅片抛光表面粗糙度值由传统抛光法所获得的Ra0.077μm降到超声辅助抛光法的Ra0.042μm,材料去除率最多可提高18%,并且工件表面形貌有明显改善. Based on a developed UEV (ultrasonic elliptic vibration)-CMP (chemical mechanical polishing ) hybrid polishing system used for silicon wafer, the experimental investigation of the effect of controllable process parameters (i. e. , polishing pressure P, slurry supplying Q, wafer velocity at polishing point v) on the process outputs (i. e. , polishing surface roughness, surface morphology, material remove rate (MRR)) were performed with or without using ultrasonic assisted polishing (UAP). Experimental results show that ultrasonic elliptic vibration of polishing tool can maintain better surface morphology of polishing pad, obtain favorable work condition for wafer polishing, and increase MRR. The effect of polishing pressure on the quality of wafer polishing surface is the biggest, followed by polishing speed, and the effect of slurry supplying is the smallest. At the best result of polishing condition, wafer surface roughness is decreased from conventional Ra 0. 077 μm to UAP Ra 0. 042 μm, the MRR is increased up to 18% by UAP, and the wafer surface morphology is also greatly improved by UAP.
出处 《东南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2008年第5期912-917,共6页 Journal of Southeast University:Natural Science Edition
基金 日本秋田县新规事业开发支援基金资助项目(A-2006235)
关键词 超声椭圆振动 化学机械抛光 复合 表面形貌 材料去除率 UEV ( ultrasonic elliptic vibration) CMP ( chemical mechanical polishing ) hybrid surface morphology MRR( material remove rate)
  • 相关文献

参考文献11

  • 1郭东明,康仁科,苏建修,金洙吉.超大规模集成电路制造中硅片平坦化技术的未来发展[J].机械工程学报,2003,39(10):100-105. 被引量:92
  • 2Kim J D, Choi I H. Micro surface phenomenon of ductile cutting in the ultrasonic vibration cutting of optical plastics[J]. Journal of Materials Processing Technology, 1997, 68(1) : 89 -98.
  • 3Thoe T B, Aspinwall D K, Wise M L H. Review on ultrasonic machining [J].International Journal of Machine Tools Manufacture, 1998, 38(4) :239 - 255.
  • 4Deng J X, Lee T C. Effect of ultrasonic surface finishing on the strength and thermal shock behavior of the EDMed ceramic composite[J]. International Journal of Machine Tools and Manufacture, 2002, 42 (2) : 245 - 250.
  • 5Hocheng H, Kuo K.L. Fundamental study of ultrasonic polishing of mold steel[J]. International Journal of Machine Tools and Manufacture, 2002, 42( 1 ): 7- 13.
  • 6吴雁,朱训生,赵波.工件横向施振超声振动磨削力特性试验研究[J].机械科学与技术,2006,25(2):146-148. 被引量:7
  • 7马春翔,胡德金.超声波椭圆振动切削技术[J].机械工程学报,2003,39(12):67-70. 被引量:55
  • 8Brinksmeier E, Glabe R. Elliptical vibration cutting of steel with diamond tools[C]//Proc of 14th Annual ASPE Meeting. Monterey, USA, 1999 : 163 - 166.
  • 9Yang W P, Wu Y B, Kato M S. A new approach to silicon wafer edge treatment by ultrasonically assisted polishing (UAP)[J].International Journal of Materials and Product Technology, 2008, 31 (2/3/4) : 159 - 175.
  • 10John M G, Chris D. Polishing pad surface characterisation in chemical mechanical planarisation [ J ]. Journal of Materials Processing Technology, 2004, 153/ 154(10) :666 -673.

二级参考文献37

  • 1..http://www.brewerscience.com.,.
  • 2Laertis Economikos. STI planarization using fixed abrasive technology, http://www.future- fab.com/.
  • 3Vo T, Buley, T Gagliardi J. Improved planarization for STI with fixed abrasive technology. Solid State Tech.,2000(6): 23-28.
  • 4Van der Velden. P Chemical mechanical polishing with fixed abrasives using different subpads to optimize wafer uniformity. Microelectronic Engineering, 2000, 50:41--46.
  • 5Nguyen V H, Hof A J, Kranenburg H Van, et al, Copper chemical mechanical polishing using a slurry-free technique. Microelectronic Engineering, 2001, 55: 305~312.
  • 6Li S J, Sun L Z, Stan Tsai, et al, A low cost and residuefree abrasive-free copper CMP process with low dishing.Erosion And Oxide Loss, IITC 2001 / IEEE.
  • 7Annabel Nickles, Dan Marohl, Gopal Prabhu, et al. Slurryless CMP enables next-generation direct polish STI.http://sst.pennnet, com/Articles.
  • 8Basol B M, Uzoh C E, Talieh H, et al. Electrochemical mechanical deposition (ECMD) technique for semiconductor interconnect applications, Microelectronic Engineering, 2002, 64:43--51.
  • 9Wang D H, Afnan M, Chiao S S. Stress-free polishing advances use of copper interconnects on silicon wafers.Semiconductor Fabtech - 13th edition, 2000:255--257.
  • 10Endisch Denis H, Drage James S. Contact Planarization Using Silica Materials, US Patent, US2003/0008522A1.

共引文献149

同被引文献29

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部