化学锰半导体性质与电池活性

Studies on Relation of Semiconductor Properties——The surface OH group of CMD to the battery activity

本文探讨以直接氧化法生成的初级二氧化锰经过重质化处理后,所研制的化学二氧化锰(CMD)的半导体性质,以及质子在MnO_2晶体内部的扩散速率对MnO_2电池活性的影响。研究结果表明:样品表现出n—型半导体的特征,与初级品相比较,其电子浓度、电子迁移率增大;结合水含量增多;表面OH基团数目减少。在9mol/LKOH溶液中进行放电时,主要是由质子在MnO_2晶格中的扩散来决定MnO_2的品质。

The semiconductor properties of CMD and the effect of the diffusion rate of proton in the MnO-crystal latties on the activity of MnO2 battery were investigated. In the study,the CMD samples were prepared with primary MnO2 made through direct oxidative method following the densification. The study points:the CMD samples showed the characteristics of n -type semiconductor and compared with primary MnO2,the con centration and transference of proton change higher,the combined water became more while the surface OH group became less when the CMD samples discharge in 9 mol/L KOH solution. The properies of MnO2 was determined mainly by the diffusion rate of proton in MnO2 crystal latteries.