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V_2O_5掺杂MgTiO_3-CaTiO_3陶瓷的介电性能 被引量：2

Dielectric properties of V_2O_5-doped MgTiO_3-CaTiO_3 ceramics
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摘要 采用固相反应法制备了V2O5掺杂的MgTiO3-CaTiO3(MCT)介质陶瓷。研究了V2O5掺杂量对陶瓷晶相组成、烧结温度和介电性能的影响。结果表明:V2O5掺杂的MCT陶瓷的主晶相为MgTiO3和CaTiO3两相结构,当掺杂量较低时,有第二相CaVO3产生;V2O5掺杂能降低MCT陶瓷的烧结温度并使其介电性能得到改善。当x(V2O5)为1%时,在1250℃烧结2.5h获得最佳性能:εr为20.17,tanδ为2×10–3,αε为4.9×10–5/℃。 V2O5-doped MgTiO3-CaTiO3（MCT） ceramics were prepared with solid-state reaction method. The effects of V2O5-doped amounts on sintering temperature, phase composition and dielectric properties of MCT ceramics were investigated The results show that MgTiO3 and CaTiO3 are the main crystal phase of MCT ceramics with V2O5 additive, the second phase CaVO3 is observed when small amount V2O5 is added; the sintering temperature of V2Os-doped MCT ceramics is lowered to 1 250℃ due to the liquid phase effect, and the dielectric loss is reduced, morever, the temperature coefficient is adjusted with V2O5 additive. MCT ceramics with 1% V2O5 additive sintering at 1 250℃ possesses the best dielectric properties： εr is 20.17, tanδ is 2× 10^-3 and aε is 7.1 × 10^-5/℃.
作者 杨秀玲 丁士华 宋天秀 张东
机构地区 西华大学材料科学与工程学院
出处 《电子元件与材料》 CAS CSCD 北大核心 2008年第10期32-34,共3页 Electronic Components And Materials
基金 四川省教育厅科技基金资助项目(No.2006c025) 校人才基金资助项目(No.R0620109)
关键词 无机非金属材料 MgTiO3-CaTiO3陶瓷 V2O5掺杂 介电性能 non-metallic inorganic material MgTiO3-CaTiO3 ceramics V2O5-doping dielectric properties
分类号 TG146 [金属学及工艺—金属材料]
  • 相关文献

参考文献9

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共引文献39

同被引文献21

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电子元件与材料
2008年 第10期

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