直接氮化法制备单晶AlN纳米线

Preparetion of monocrystal AlN nanowires by direct nitridation method

采用直流电弧放电装置,通过金属铝和氮气直接反应,在钼阴极上沉积出大量的AlN纳米线。利用XRD、SEM、TEM和拉曼(Raman)光谱对所制样品的结构、形貌和光学特性进行了表征。结果表明:大部分AlN纳米线沿着[001]方向生长,平均直径为45nm,长度5μm左右;Raman光谱的峰值与单晶体材料AlN的结果一致,说明AlN纳米线结晶质量较好。

AIN nanowires were deposited on the Mo cathode by direct reaction of metal AI and N2, using the direct current arc discharge equipment. The structure, morphology and optical property of the prepared sample were characterized by XRD, SEM, TEM and Raman spectrum. The results reveal the AIN nanowires grow along the [001] direction. The AIN nanowires have an average diameter of 45 nm and lengths of about 5 μm. The Raman spectrum of the AIN nanowires is consistent with that of monocrystal bulk AIN, indicating it＇s a good crystallization.