期刊文献+

等离子体技术制备氧化硅阻隔层薄膜的研究 被引量:6

Preparation of SiO_x Barrier Coatings by Plasma Deposition
下载PDF
导出
摘要 采用无任何污染的等离子体技术,进行SiOx薄膜的沉积:电子束蒸发氧化硅、离子源辅助电子束蒸发氧化硅、磁控溅射沉积氧化硅、离子源辅助磁控溅射沉积氧化硅、等离子体化学气相沉积SiOx等,并对所沉积的薄膜进行结构性能的比较研究。 SiOx coatings on plastic surface for gas and humid barrier purpose were deposited by plasmas. In order to evaluate the plasma technologies, several methods were carried out, such as electron beam (EB) evaporation, ionic enhanced EB evaporation, magnetron'sputtering, and ionic enhanced magnetron sputtering , as well as plasma enhanced chemical vapor deposition (PECVD). It is fund that each source showed its advantage and disadvantage, but PECVD demonstrated a better WVTR and OTR values than others. The possible reason was explained.
出处 《包装工程》 CAS CSCD 北大核心 2008年第10期8-11,14,共5页 Packaging Engineering
基金 国家自然科学基金(1775017) 北京市人才强校拔尖人才计划(PHR(IHLB))资助
关键词 等离子体技术 SIOX薄膜 高阻隔包装 plasma technologies SiOx coating high barrier packaging
  • 相关文献

参考文献3

二级参考文献20

  • 1张广秋,葛袁静,张跃飞,陈强.等离子体技术在包装工业中的应用及其前景[J].包装工程,2004,25(5):127-129. 被引量:3
  • 2王正铎,张跃飞,葛袁静,张广秋.氧化硅阻隔膜的制备及对水蒸气的阻隔特性研究[J].包装工程,2004,25(5):156-158. 被引量:8
  • 3Zou X P, Kang E T, Neoh K G, et al. [J]. polymer, 2001,42:6409-6418.
  • 4Wu J Z, Kang E T, Neoh K G,et al. International Journal of Adhesion & Adhesives[J]. 2000,20:467-476.
  • 5Li Chi-Lan,Tu Chen-Yuan,Huang Jiun-Shiung, et al.[J]. Surface & Comings Technology, 2006,201 : 63-72.
  • 6Hsueh Chan-Li, PengYu-Jen, Wang Cheng-Chien et al. [J]. Journal of Membrane Science,2003, 219:1-13.
  • 7Moosheimer U and Bichler C H 1999 Surf. Coatings Technol. 116 812
  • 8Wuua D S, Loa W C, Changa L S and Horng R H 2004 Thin Solid Films 468 105
  • 9Madocks J and Rewhinkle J 2004 Packaging Barrier Films Deposited on PET by PECVD Using New High Density Plasma Source, SVC Annual Technical Conference (Tucson, AZ) p 10
  • 10Hegemann D, Brunner H and Oehr C 2001 Surf. Coatings Technol. 142 849

共引文献21

同被引文献55

引证文献6

二级引证文献25

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部