二氧化硅高阻隔薄膜制备的质谱诊断及性能研究

Diagnosis and Characterizations of SiO_x Gas Barrier Film by Mass Spectrometer

采用40kHz中频脉冲电源,利用电容耦合等离子体增强化学气相沉积(PECVD)技术,以六甲基二硅氧烷(HMDSO)为单体、氧气为反应气体,氩气为辅助气体,在PET薄膜表面沉积应用于透明高阻隔包装的氧化硅薄膜,并对其进行研究。为了了解氧化硅的形成机理,通过四极杆质谱仪对等离子体放电的气相中间产物及活性粒子进行了原位检测;而通过傅立叶变换红外光谱仪(FTIR)及原子力显微镜(AFM)对沉积薄膜进行化学组成及表面形貌分析表征,探讨了沉积过程中等离子体气相粒子的产生和反应对薄膜特性的影响。

With carrier gas O2, diluted gas Ar, and monomer hexamethyldisiloxane （HMDSO） the films were prepared in capacitively coupled plasma. The characterization of SiOx film deposited on PET substrates by plasma enhanced chemical vapor deposition （PECVD） with 40kHz mid-frequency pulse power source as a transparent barrier layer was investigated. The intermediate precursor and reactive species or molecules were detected in-situ by means of quadrupole mass spectrometer. The composition and surface topography of thin films were also investigated through Fourier transform infrared spectroscopy （ FTIR） and atomic force microscope （AFM）. The influence of the generation and reaction of plasma gas particles on characteristics of the SiOx film was discussed.