摘要
The electronic structure of pure and S-doped chalcopyrite CulnSe2 is investigated using a first-principles pseudopotential method in the generalized gradient approximation. The calculation indicates that the band gap of CulnSe2 broadens as S-doping concentration increases. We find that the decreased lattice volume due to isovalent S-doping in CulnSe2 has a significant impact on the band gap broadening phenomena. This physical insight is further discussed with the study of the electronic structure and bond length changes.
运用第一性原理方法研究了CuInSe2和不同量的S掺杂CuInSe2所形成的化合物的电子结构.理论计算表明,S掺杂导致CuInSe2禁带宽度增大,且通过对其电子结构和键长的分析,发现因S掺杂浓度的增加而导致的CuInSeS化合物晶格体积减小对其禁带宽度的增加有重要的影响.
基金
华南理工大学高性能计算中心资助项目~~
