摘要
This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along the [110] orienta- tion and [110]ientation induces a change in the RTD＇s current-voltage （I-V） curves,i, e., the meso-piezoresistance variety,mainly in its negative different resistance （NDR） region. By different methods,the mechanic-electric coupling characteristic of RTD is studied and the consistent 10^9Pa^1 piezoresistive coefficients are discovered.
报道了微结构中共振隧穿二极管(RTD)的压阻效应.分析并加工了四梁结构,其中RTD置于应力敏感区.沿[110]晶向和[10]晶向的应力导致RTD电流-电压曲线的改变,即介观压阻变化,尤其是在微分负阻(NDR)区.采用不同测试方法,研究了RTD的力电耦合特性,并获得了较相近的压阻系数为10-9Pa-1.
基金
国家自然科学基金(批准号:50535030,50775209)
新世纪优秀人才支持计划资助项目~~
