摘要
采用电子束蒸发技术在TiO2缓冲层上沉积了ZnO薄膜,研究了不同的退火温度对薄膜晶化质量及发光性质的影响.利用X射线衍射仪和扫描探针显微镜分析了薄膜样品的结构性质,利用荧光光谱仪研究了薄膜样品的光致发光性质.分析结果表明,退火处理后的ZnO薄膜都沿c轴择优生长.在600℃下退火的样品具有最强的(002)衍射峰、最强的紫外发射和最弱的可见光发射,其晶粒大小均匀,紧密堆积.而对于在500和700℃下退火的样品,其可见光发射较强.这表明在600℃下退火的样品具有最好的晶化质量.
ZnO thin films were deposited on TiO2 buffer layers by electron beam evaporation. The effect of annealing temperature on crystalline quality and photoluminescence of the films was studied. The structural characteristics of the as-deposited and annealed films were investigated by an X-ray diffractometer and a scanning probe microscope. The photoluminescence was studied by fluorophotometer. The analysis results show that all the annealed ZnO thin films grown on TiO2 buffer layers are preferentially oriented along the c-axis. The film annealed at 600℃ has the highest （002） diffraction peak, the strongest ultraviolet emission,and the weakest visible emission. Its grain sizes are uniform and its grains are closed packed. The samples annealed at 500 and 700℃ have relatively strong visible emissions that originated from defects. These indicate that the film annealed at 600℃ has the best crystalline quality.
