摘要
液滴外延生长半导体材料是一种较为新颖的MBE生长技术,而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果.作者在GaAsμm级别图形衬底上进行了InAs的液滴外延生长,并在不同结构的图形衬底上得到了不同的InAs量子点和量子环生长结果.基于生长结果,分析了图形衬底对液滴外延的影响和液滴外延下量子点和量子环的形成机制以及分布规律.
Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now. The authors report different quantum dots and quantum rings grown on different types of tim-scale patterned substrates and analyze the influence of patterned substrate on droplet epitaxy, the formation mechanism of the quantum rings, and their distribution behavior.
基金
国家重点基础研究发展规划(批准号:2006CB604908)
国家自然科学基金(批准号:60625402)资助项目~~
关键词
液滴外延
图形衬底
量子点
量子环
分布规律
droplet epitaxy
patterned substrate
quantum dot
quantum ring
distribution behavior
