第VI族元素半导体纳米线的可控合成及其纳米电子学器件研究

Controlled Synthesis of VI Group Element Semiconductor Nanowires and Their Nano-electronic Properties

采用化学液相反应,以亚硒酸或者原碲酸为原料,合成出尺寸均匀、高结晶度的硒、碲纳米线。高分辨电镜分析结果表明:合成的硒、碲纳米线均为三方晶单晶结构,生长方向沿其螺旋轴即[001]方向生长。结合光刻、电子束刻蚀技术,分别制备了硒、碲纳米线场效应晶体管器件(FET)。对器件测试的结果显示:硒和碲纳米线均为p型半导体,其相应的空穴迁移率分别为30.7,70cm2V-1s-1。这对新型纳米线电子学器件的开发应用具有重要意义。

Homogeneous, highly crystalline Se and Te nanowires （NWs） were prepared by a chemical solution process using selenious acid and orthotelluric acid as precursor materials. HRTEM images show that the Se or Te NW are single crystalline with their growth direction along the [001], with the helical chains of Se or Te atoms parallel to the longitudinal axis. Se and Te NWs field effective transistor device were prepared by photolithography or e-beam lithography. The device performance show that Se or Te is p type semiconductor with hole mobility about 30.7, 70cm2V-1s-1 respectively. This result is very important to the application of nanoscale electronic device.