环境气体对激光烧蚀制备纳米Si晶粒平均尺寸的影响

Influence of Ambient Gas on Average Size of Si Nanoparticles Deposited by Pulsed Laser Ablation

采用脉冲激光烧蚀装置,在不同环境气体下,沉积制备了含有纳米Si晶粒的薄膜。利用扫描电子显微镜(SEM)观察样品的表面形貌,并对晶粒尺寸进行统计分析,发现不同环境气体下,纳米Si晶粒平均尺寸均随衬底与靶的距离增加有着先增大后减小的规律;通过分析比较,同等条件下Ne气环境下制备的纳米Si晶粒平均尺寸最小。

The nanocrystalline silicon films containing nanoparticles were prepared by pulsed laser ab- lation in different ambient gas. Surface morphology of the Si film was observed by scanning electron microscopy （SEM） and was found that the average size of Si nanoparticles prepared in different gas all increased initially and then decreased with distance between the target and the substrate increasing. The average size of Si nanoparticles was the smallest under the condition of Ne ambient gas.