摘要
本文采用线性组合算符和幺正变换方法研究了抛物型量子点中强耦合激子的性质.当计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子点中激子的基态能量的影响.以氯化铊半导体为例进行了数值计算,结果表明:激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大.
The properties of exciton with electron - LO - phonon strong - coupling are studied by using the linear - combination operator and unitary transformation method in a parabolic quantum dot. Considering the interactions between phonons with different wave vectors in the recoil process, the influences are discussed on the ground state energy in quantum dot. Numerical calculations are performed for T1C1 semiconductor as a example and the results show that the ground state energy of exciton decreases with increasing the radius of quantum dot and increases with increasing the confinement strength of quantum dot.
出处
《内蒙古民族大学学报(自然科学版)》
2008年第5期481-483,共3页
Journal of Inner Mongolia Minzu University:Natural Sciences
基金
国家自然科学基金资助项目(10347004
10747002)
关键词
量子点
激子
声子间相互作用
基态能量
Quantum dot
Exciton
Interaction between phonons
Ground state energy