射频磁控溅射法制备TiO2-xNX薄膜的结构性能研究

Study on the Structure and Properties of TiO_(2-x)N_x Thin Films Fabricated by RF Magnetron Sputtering

利用射频磁控溅射法室温下在Si(100)衬底上制备了N掺杂的TiO2薄膜,并且采用X射线衍射(XRD)、X射线光电子能谱(XPS)和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2(33.3%)/Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相,薄膜结晶性良好,呈高度(211)择优取向,而在N2(50.0%)/Ar下制备的薄膜结晶性明显变差;对于N掺杂的TiO2薄膜,XPS表明部分N原子进入TiO2晶格,并且以N-Ti-O、N-O键以及间隙式N原子形式存在;透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

The visible light-active nitrogen-doped titanium oxide films were deposited on Si （100） substrates at room temperature by RF magnetron sputtering. The films were characterized using X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS） and transmission spectra. XRD reveals that the TiO2 films grown under pure Ar and N2 （33.3%）/Ar atmosphere show highly ru.tile （211 ） preferred orientation. However, the crystallinity of the film grown under N2 （50.0%）/Ar decreased greatly. XPS demonstrates that doping N atoms in TiO2-xNx films exist in three types： N-Ti-O, N-O and interstitial N atoms. Transmission spectra shows that the absorption edge of N-doped TiO2 film have a red shift. Based on the experiment, it could be concluded that the N doping is effective to narrow the energy gap and enhance photoelectric activities.