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制备工艺对p型ZnO薄膜微观结构和电学特性的影响 被引量:1

Influences of Preparation Techniques on the Microstructure and Electric Characteristics of p-ZnO Thin Films
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摘要 本文报道溅射工艺、退火工艺和冷却方式对磷扩散法制备的p型ZnO薄膜的微观结构和电学特性的影响的实验研究。研究结果表明,ZnO薄膜的表面形貌、结晶度、内应力以及电学特性均与制备工艺条件有密切的关系。文章对这些关系的机理做了探讨和分析。 Techniques including magnetron sputtering, annealing, and cooling for preparing p-ZnO thin films by phosphorus diffusion and their influence on the microstructure and electric characteristics of the films have been studied in this article. Results of the research reveal that the morphology, crystallinity and electric characteristics of the p-ZnO films have close relations to the preparation techniques of the films. Mechanisms of the relations have been discussed and analyzed.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2008年第5期1237-1241,1272,共6页 Journal of Synthetic Crystals
基金 广东省自然科学基金(No.04011770) 江门市科技计划(江财企【2004】59号)
关键词 ZNO薄膜 工艺条件 微观结构 电学特性 p-ZnO films preparation techniques microstructure electric characteristics
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参考文献10

  • 1Zhou X, Ye Z, Chen F. Xu W Miao Y, Huang J, et al. [J]. Chin. J. Semicond. ,2006,27:91.
  • 2Heo Y W, Kwon Y W, Li Y Pearton S J. Norton D P. [J]. Appl . Phys. Lett. , 2004,84:3474.
  • 3Kim K K, Kim HS, Hwang D K. Lim J H, Park S J. [J].Appl. Phys Lett. ,2003,83:63.
  • 4Yang J, Kim H, Lira J, Hwang D, Oh J, Park S. [J].J. Electrochem. Soc. ,2006,153:G242.
  • 5Wang P, Chen N, Yin Z G. [J].Appl. Phys. Lett. ,2006,88:152102.
  • 6Ding R Q, Zhu H Q, Zeng Q G. Fabrication of p-type ZnO Thin Films via Magnetron Sputtering and Phosphorus Diffusion. [ J]. Vacuum,2008, 82:510-513.
  • 7Ding R Q, Zhu H Q, Yi W. Realization of Phosphorus-doped p-type ZnO Thin Films via Diffusion and Thermal Activation[ J]. Materials Letters, 2008,62:498-500.
  • 8丁瑞钦,朱慧群,曾庆光,林民生,冯文胜,梁毅斌,梁满堂,梁达荣.磷扩散法制备p型ZnO薄膜[J].人工晶体学报,2007,36(4):859-862. 被引量:3
  • 9Park C H, Zhang S B, Wei S H. [J].Phys . Rev. B,2002,66:073202.
  • 10Limpijumnong S, Zhang S B, Wei S H, Park C H. [J].Phys . Rev. Lett. ,2004,92:155504.

二级参考文献14

  • 1Park C H,Zhang S B,Wei S H.Origin of p-type Doping Difficulty in ZnO:The Impurity Perspective[J].Phys.Rev.B,2002,66 (7):073202.
  • 2Minegishi K,Koiwai Y,Kikuchi Y,et al.Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition[J].Jpn.J.Appl.Phys.,1997,36:L1453.
  • 3Lu J G,Ye Z Z,Zhu ge F,et al.p-type Conduction in N-Al Co-doped ZnO Thin Films[J].Appl.Phys.Lett.,2004,85 (15):3134.
  • 4Joseph M,Tabata H,Kawai T.p-type Electrical Conduction in ZnO Thin Films by Ga and N co-doping[J].Jpn.J.Appl.Phys.,1999,38:2505.
  • 5Nause Jeff,Pan Ming,Rengarajan Varatharajan,Nemeth William,Ganesan Shanthi,Payne Adam,Li Nola,Ferguson Ian.ZnO Semiconductors for Lighting[J].Proc.of SPIE,2005 5941:70.
  • 6Look D C,Renolds D C,Litton C W,et al.Characterization of Homoepitaxial p-type ZnO Grown by Molecular Beam Epitaxy[J].Appl.Phys.Lett.,2002,81 (10):1830.
  • 7Singh A V,Mefra R M,Wakaha A,et al.p-type Conduction in Codoped ZnO Thin Films[J].J.Appl.Phys.,2003,3 (12):396.
  • 8Barnes T M,Olson K,Wolden C A,et al.On the Formation and Stability of p-type Conductivity in Nitrogen-doped Zinc Oxide[J].Appl.Phys.Lett.,2005,86 (11):112112.
  • 9Kim K K,Kim H S,Hwang D K,et al.Realization of p-type ZnO Thin Films via Phosphorus Doping and Thermal Activation of the Dopant[J].Appl.Phys.Lett.,2003,83 (1):63.
  • 10Limpijumnong S,Zhang S B,Wei S H,et al.Doping by Large-size-mismatched Impurities:The Microscopic Origin of Arsenic-or Antimonydoped p-type Zinc Oxide[J].Phys.Rev.Left.,2004,92.

共引文献2

同被引文献9

  • 1Desgreniers S. High-density Phases of ZnO : Structural and Compressive Parameters [ J ]. Physical Review B, 1998,58 (21 ) : 14102 -14105.
  • 2Jaffe J E, Snyder J A, Lin Z J, et al. LDA and GGA Calculations for High-pressure Phase Transitions in ZnO and MgO[J]. Physical Review B, 2000,62( 3 ) : 1660-1665.
  • 3Payne M C, Teper M P, Allan D C, et al. Joannopoulos, Iterative Minimization Techniques for Ab Initiototal-energy Calculations: Molecular Dynamics and Conjugate Gradients[ J]. Review of Modern Physics, 1992,64: 1045-1097.
  • 4Karzel H, Potzel W, Kofferlein M, et al. Lattice Dynamics and Hyperfine Interactions in ZnO and ZnSe at High External Pressures[ J]. Physical Review B, 1996 ,53( 17 ) : 11425-11438.
  • 5Meyer B, Marx D. Density-functional Study of the Structure and Stability of ZnO Surfaces[J]. Phys. Rev. B, 2003,67:035403(1-11 ) .
  • 6Jansen H J F, Freeman A J. Structural and Electronic Properties of Graphite Via an All-electron Total-energy Local-density Approach [ J ]. Physical Review B, 1987, 35:8207-8214.
  • 7Liu H Z, Ding Y, Somayazulu M, et al. Rietveld Refinement Study of the Pressure Dependence of the Internal Structural Parameter u in the Wurtzite Phase of ZnO[ J]. Physical Review B,2005,71:212103 (1-4).
  • 8Chang K J, Froyen S, Cohen M L. Electronic Band Structures for Zinc-blende and Wurtzite CdS [ J]. Physical Review B, 1983,28:4736-4743.
  • 9Yan Y, Dalpian G M, Jassim M M A, et al. Energetics and Electronic Structure of Stacking Faults in ZnO [ J ]. Physical Rev/ew B, 2004,70: 193206 (1-4).

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