用光电压谱研究 GeSi/Si 量子阱的带间光跃迁

Studying GeSi/Si Quantum Well Band to Band Optical Transitions by Means of Photovoltage Spectrum

在１８～３００Ｋ温度范围内，测量了ｘ＝０．２和０．５两种不同结构的ＧｅｘＳｉ１－ｘ／Ｓｉ应变层多量子阱的光电压谱，观测到ＨＨ１，ＬＨ１，ＨＨ２等激子光吸收跃迁信号以及ＴＯ声子辅助ＨＨ１激子光吸收跃迁信号．低温下的光电压谱反映了量子阱台阶式的状态密度分布．方形势阱模型的理论计算结果与实验结果符合较好．

In measuring  Ge x Si 1-x /Si strained layer multi quantum well photovoltage spectrum,with structures of x=0 2 and 0 5, at the temperatures ranging from 18～300 K, HH1, LH1, HH2 and other exciton transitions and To phonon aided HH1 exciton transition were observed. The photovoltage spectrum at low temperature shows the step like distribution of state density of quantum well. The theoretical calculation results of square potential well model conform well to the experimental results, which are discussed here in the paper.