摘要
研究了一种利用金属自组装纳米掩膜和ICP刻蚀对AlGaInP基发光二极管(LED)表面进行粗化的技术,使光输出得到了提高。粗化了的AlGaInP基LED比常规的AlGaInP基LED,光强提高了27%,光功率提高了12.6%,实验结果具有可重复性。可以进一步优化Au颗粒的周期和分散程度,提高AlGaInP基LED的提取效率。
The self-assembled nanostructure metal is proposed as the masks, then the surface of AlGaInP light emitting diodes （LED） is dry-etched to be roughened. The roughened surfaces-increase the light-output. The light intensity and light power of roughened AlGaInP LEDs increase by 27 % and 12.6 % respectively compared with normal AlGaInP LEDs. By optimizing the period and separation of metal masks,the light-output will be further increased.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第10期1301-1303,共3页
Journal of Optoelectronics·Laser
基金
国家“973”计划资助项目(2006CB604902)
国家“863”计划资助项目(2006AA03A121)
北京市人才强教计划资助项目(05002015200504)
关键词
表面粗化
金属纳米掩膜
干法刻蚀
surface roughing
metal nanograde masks
dry etching
