半导体激光器阵列的远场分布模型和分布特性研究

Study of far-field expression and distribution properties of laser diode arrays

从亥姆霍兹方程出发,以单管半导体激光器(LD)分布特性为基础,提出了半导体激光器阵列(LDA)远场分布模型,模型理论仿真结果与LDA实际测试数据符合地很好,实验结果表明:在LDA能量分布95%的主要区域内,该理论模型拟合测量数据的误差小于5%。且理论模型和实验结果同时证明:在传输距离达到一定值后,LDA光束截面的光强分布在平行结平面方向一直呈双峰结构。

Based on Hdmholtz equation and far-field distribution characteristic of LD, a far-fidd expression model of laser diode arrays（LDA） is proposed. The simulation results agree well with the measured far-field data of practical devices. The experiment results show that the overall error of this model is less than 5% for simplified LDAs and popular LDAs in the more than 95 G power region. And it is proved that LDA has a bipeak structure beyond a certain propagation distance.