摘要
对OLED两管a-Si∶H有源驱动技术中存储电容对器件寿命的影响进行了详细的讨论;结合驱动管的宽长比,从理论分析和SPICE模拟两个方面研究了存储电容对电路充电率、跳变电压和保持特性的影响,找出其间相互制约的数量关系,最后给出优化设计的参考值。
The relationship between storage capacitance and life time of the OLED in a-Si： H TFT OLED driving circuit was investigated. By using theory calculation and AIM-SPICE simulation software, the influence of the storage capacitance and geometry （W/L） of switching TFT channel on charge and keep-characteristics of a-Si： HOLED was studied. The parameters of pixel design were optimized, such as the storage capacitance and geometry of TFT channel.
出处
《液晶与显示》
CAS
CSCD
北大核心
2008年第5期572-577,共6页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然科学基金资助项目(No.10644002)
关键词
OLED
有源驱动
存储电容
充电率
OLED
active driving
storage capacitance
charge efficiency
