摘要
以InCl3.4H2O和SnCl4.5H2O为主要原料,采用溶胶-凝胶法和旋转涂膜工艺,在玻璃基片上制备掺锡氧化铟透明导电薄膜(ITO).用紫外-可见透射光谱和四探针技术,研究了不同掺Sn量、不同热处理温度和热处理时间对薄膜光学和电学性能的影响.实验结果表明,最佳工艺条件为掺Sn量11%,热处理温度480℃,热处理时间60 min.在最佳工艺条件下制备的ITO薄膜可见光透过率达82%以上,薄膜的方块阻为390Ω/□.
Using InCl3 · 4H2O and SnCl4 · 5H2O as raw materials, ITO transparent thin films were prepared on common glass substrate by the sol-gel spin-coating process. The effects of heat-treatment temperature and time,and Sn dopant content on the optical and electrical properties of ITO thin films were investigated by UV-Vis transmission spectra and four-probe electrical measurement. The electrical and optical measurement results indicate that the best processing conditions are Sn dopant content being 11%,heat- treatment temperature being 480℃ ,heat-treatment time being 60 min. Under these conditions,the average visible transmittance of the ITO film is about 82% and the sheet resistance is about 390Ω/□.
出处
《内蒙古师范大学学报（自然科学汉文版）》
CAS
2008年第5期619-623,共5页
Journal of Inner Mongolia Normal University(Natural Science Edition)
基金
国家自然科学基金资助项目(50662003)
内蒙古师范大学研究生基金资助项目(YJS06045)
关键词
掺锡氧化铟薄膜
溶胶-凝胶法
光电性能
方块电阻
ITO thin film
sol-gel process
optical and electrical properties
sheet resistance
