应用渐进因子分析法研究SiO_2/Si样品俄歇深度剖析

Application of Evolving Factor Analysis to study AES Depth Profiles of SiO 2/Si sample

首次利用渐进因子分析法对ＳｉＯ２／Ｓｉ样品俄歇深度剖析过程进行研究，发现ＳｉＯ２／Ｓｉ界面处有ＳｉＯｘ成分存在，ｘ值在１０～１５之间，厚度约为３０ｎｍ，含量接近５０％。Ａｒ＋离子束的轰击使得ＳｉＯ２薄膜内分解产生亚稳态ＳｉＯ２，含量在１７％左右。研究结果表明，渐进因子分析法非常适合于俄歇深度剖析的化学态分析。

In application of evolving factor analysis to study AES depth profiles of SiO 2/Si sample,it was found that the SiO x existed in SiO 2/Si interface with x values of 1 0 to 1 5,a depth of about 30 nm,and a content of about 50% However,metastable SiO  2 would be induced by bombardment of Ar + ion cluster in SiO 2 film,with a content of about 15% These results suggested that evolving factor analysis was very suitable in study of AES depth profile