CMOS MOCCⅡ高频非理想特性研究

Study on high frequency non-ideal characteristic of CMOS MOCCⅡ

本文用高频小信号等效电路对MOCCⅡ电路进行了分析,提出了vx/vy的双二次模型理论。采用最小二乘法中的最速下降法根据MOCCⅡ的PSPICE仿真曲线对该模型进行最小二乘曲线拟合,得出双二次模型各参数。拟合后曲线与PSPICE仿真曲线在取样点误差的方均根值为10-7数量级;同时对iz/ix的单极点模型和iz-/ix的双极点模型均进行了最小二乘曲线拟合,得出了模型参数,拟合后曲线与PSPICE仿真曲线在取样点误差的方均根根值为10-5数量级。这些MOCCII(CCⅡ)高频模型在高频滤波器等电路的设计中具有重要的意义。

The paper analyzes MOCCII circuits using HF （high frequency） small signal equivalent circuit, and presents biquadratic model of Vx/Vy. We fit the model curve using the fastest descent method in least squares ways on the basis of the CCII＇s PSPICE simulation, and give the all model parameters. It is 10^-7 that the quantitative level of the RMS value （the root mean square value） of the sampling points between the fitting curve and the PSPICE simulation curve. For the single pole model of iz/ix and the double pole model of iz_/ix we also fit the model curve using the same way, and gain the model parameters and the 10^-5 quantitative level of the RMS value. These MOCCII HF model are provided with important significance in circuit design, the HF filter etc.