摘要
在室温下研究了外腔反馈对GaAlAs量子阱半导体激光器阈值的影响,提出了测量实际反馈量及半导体激光器增益介质吸收系数的方法,利用所测反馈系数及阈值得到了反馈耦合因子k。
The effect of threshold of the indexguided quantum well GaAlAs laser diodes in the external cavity feedback was studied at room temperature. A way of measuring the absorption coefficient and the actual amount of feedback was demonstrated. By measuring the threshold reduction of laser diodes with different feedback, we got the feedback coupling constant k and the absorption coefficient of α
出处
《量子光学学报》
CSCD
1997年第4期242-246,共5页
Journal of Quantum Optics
基金
国家青年自然科学基金
山西省归国留学人员基金
青年学术带头人基金