Shipley光刻胶性能研究

Performance of Shipley Photoresist

基于曝光和显影理论对shipley光刻胶显影速度随曝光量的变化进行研究,得到其数学表达式.通过改变激光波长以及曝光量,显影液的温度、浓度、显影时间等,经台阶实验得到其实验数据.由拟合实验数据得到显影速度随曝光量变化的曲线,并通过对曲线的分析比较认识光刻胶的性能,以期为制作高质量、符合要求的光栅掩模工艺提供有价值的参数.

Based on the theory of exposure and development, this paper carried out a study on variations in the developing speed of shipley photoresist with the exposure to obtain the mathematical experssion. By altering the laser wavelength, exposure, temperature and concentration of developing liquid and developing time, yielded was the experimental data after the step test, and by matching the data the variation curves. Through analyses and comparisons of the curves, the authors got acquainted with the performance of shipley photoresist, so as to provide valuable parameters for patterning the top-quality raster masking technology in accordance with demands.