钢基表面磁控溅射法3C-SiC薄膜制备研究

Study on the 3C-SiC films prepared by magnetron sputtering on steel

采用磁控溅射的方法溅射SiC靶材所制备的碳化硅薄膜由于制备过程中碳易被溅射气体带走而很难形成结构较好的晶态结构。采用纯物理方法实时增碳又非常困难,实验采用先对衬底升温射频磁控溅射沉积碳化硅,然后再用直流法在表面沉积碳——两步法在钢基体表面制备薄膜。对所制备的薄膜结构采用X射线衍射和傅立叶红外吸收光谱表征;并通过扫描电镜观察了薄膜的表面形貌。结果表明,通过这种方法所得出的薄膜在XRD图像中显示了很明显的3C-SiC的晶态峰,在红外分析中也得到了其相应的吸收峰。

Well crystal silicon carbide structure could not be produced by magnetron sputtering from a single SiC target, because of the carbon atoms sputtered from the target were taken away by working gas. And it is difficult to inject the carbon by physical method while in the process of sputtering. In this research, films were deposited by two steps, first a silicon carbide film with a designed substrate temperature was produced, then samples turn to a graphite target to increase the carbon. X-ray diffraction （XRD） and fourier-transform infrared spectroscopy （FTIR） were carried out to check the structure of the films, and SEM photos were used to show the surface shape. Results show that well cubic silicon carbide films were produced by this method with the conclusion of the XRD graphs and FTIR patterns.