摘要
使用阳极化钝化方法制造的InSb红外探测器,在可见光照射下,器件反偏漏电流大,零偏阻抗低。通过对其漏电流分析和制作MIS器件进行试验,发现阳极化层中的陷阱能级感应n型InSb表面产生反型,p/n结表面附近的反型层与p型层连接后起到分流电阻作用,导致器件电性能变差。
The InSb detectors which are fabricated in anodic way and exposed to visible light illumination is characterized by large leak current ratio in the inversion region and small impedance at zero bias voltage. By analysis of dark current mechanism and experiments, it is found that the n - InSb reverse layer induced by trap energy of anode polarization layer connects with p - InSb layer, which plays a role of shunt resistance, and leads to the electric performance of detectors badly.
出处
《航空兵器》
2008年第5期62-64,共3页
Aero Weaponry
