摘要
采用微波光电导衰减法(μ-PCD)、扫描电镜等测试技术,研究了快速热处理(RTP)对铸造多晶硅片表面缺陷形貌以及少子寿命特性的影响。结果表明:铸造多晶硅片经低中温(750、850和950℃)RTP时,硅片的少子寿命明显降低,其中在950℃、保温30s时硅片的少子寿命下降幅度最大;当硅片经高温1050℃RTP时,硅片的少子寿命急剧增大,最大幅度达到初始寿命值的4.3倍。另一方面,保温时间对硅片少子寿命也有很大影响,一定RTP温度下,随着保温时间的增加,硅片的少子寿命逐渐增大。
The effect of rapid thermal processing（RTP） on minority carrier lifetime and surface defect microstructure of cast multicrystalline silicon was investigated by microwave photo conductive decay（μ-PCD）and scanning electron microscopy（SEM）.It is found that the minority carrier lifetime decreases obviously for multicrystalline silicon after RTP at temperatures from 750℃ to 950℃, especially for the sample annealed at 950℃ for 30s.However,the minority carrier lifetime increases sharply when the RTP temperature is 1050℃,and the largest lifetime value is 4.3 times than the initial value.On the other hand, the minority carrier lifetime is affected obviously by annealing time,and the minority carrier lifetime increases as annealing time increases.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2008年第5期5-8,共4页
Transactions of Materials and Heat Treatment
基金
国家自然科学基金(50572022)
河北省教育厅资助项目
关键词
铸造多晶硅
少子寿命
快速热处理(RTP)
缺陷
cast multicrystalline silicon
the minority carrier lifetime
rapid thermal processing（RTP）
defect
