AlInGaN/GaN PIN紫外光电探测器的研制

Development on AlInGaN/GaN PIN Ultraviolet Photodetectors

用AlInGaN四元合金代替AlGaN作为PIN探测器的有源层,研制出AlInGaNPIN紫外探测器。详细介绍了该器件的结构设计和制作工艺,并对器件进行了光电性能测试。测试结果表明,器件的正向开启电压约为1.5 V,反向击穿电压大于40 V;室温-5 V偏压下,暗电流为33 pA,350 nm处峰值响应度为0.163 A/W,量子效率为58%。

Using AIlnGaN instead of AlGaN as the source film of a photodetectors, an AllnGaN-based PIN UV photodetector was developed. Its device structure and fabrication processing are introduced in detail. Measurement results show that its turn-on voltage is about 1.5 V , and VBR〉40 V ; under - 5 V bias voltage at room temperature, the dark current is about 33 pA ; the peak responsivity can reach 0. 163 A/ W at 350 nm, and the quantum efficiency is 58%.