Al 离子注入 Al-SiO_2 的研究

Al ion implantation into Al films in SiO 2 substrates

在Ａｌ－ＳｉＯ２系统中进行Ａｌ离子注入以改善Ａｌ膜质量和提高其与ＳｉＯ２基底的结合力；注入能量为７０ｋｅＶ，注入剂量分别为５×１０１５／ｃｍ２和５×１０１６／ｃｍ２Ａｌ离子．结果表明注入后膜基结合力提高了１０倍以上，显微硬度也明显提高．然而，高剂量注入导致薄膜中拉应力的产生，降低了膜基结合力．Ａｌ离子注入还使薄膜晶粒细化，从而改善薄膜的韧性．

Al ions were implanted into the Al films on SiO 2 substrates to improve the properties and the adhesion of the films. The implantation energy was 70 keV. The dosage was 5× 10 15 /cm 2 and 5×10 16 /cm 2 Al ions, respectively. The results show that the adhesion of the films has been improved by more than 10 times and the microhardness has also been increased evidently. The irradiation damage inducing film hardening is the main reason for the increased microhardness. The main consequences that attribute to the improved adhesion are the interface mixing and the fomation of Al 2O 3 at the interface. The lower porosity in the film at the interface may also increase the film adhesion. While the tensile stress developed at higher implantation dosage is deleterious to the film adhesion, Al ion implantation leads to the refinement of the film grains and thus improves the film ductility.