硅基扩镓溅射Ga_2O_3反应自组装GaN薄膜

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜氮化反应组装GaN薄膜,研究硅基扩镓时间对GaN薄膜晶体质量的影响。利用红外透射谱(FTIR)、X射线衍射(XRD)、扫描电镜(SEM)、光电能谱(XPS)和荧光光谱(PL)对生成的GaN薄膜进行组分、结构、表面形貌和发光特性分析。测试结果表明:采用此方法得到六方纤锌矿结构的GaN晶体膜。同时显示:在相同的氮化温度和时间下,随着硅基扩镓时间的增加,薄膜的晶体质量和发光特性得到明显提高。但当硅基扩镓时间进一步增加时,薄膜的晶体质量和发光特性却有所降低。较适宜的硅基扩镓时间为40min。

Gallium nitride thin films have been successfully grown on the Ga -diffused Si （111 ） substrates through nitriding Ga2O3 thin films deposited by r.f. magnetron sptittering and the influence of Ga - diffused times on the GaN films were investigated. Fourier Transform Infrared transmission （FTIR） Spectroscopy, X - ray diffraction （ XRD）, scanning electron microscopy （ SEM ） and photoluminescence （PL） are employed to analyze the structure, surface morphology and optical properties of the synthesized samples. The results reveal that the as -grown films are hexagonal GaN. In addition, the results suggest that the crystalline quality and optical properties of the as - formed films were improved with the increasing of Ga - dif- fused time under the condition of same nitridation temperature and time. But the crystalline quality decreases with the Ga - diffused time increasing to 60min. The optimum Ga - diffused time was 40min.