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气-液-固法在半导体纳米线生长中的应用

Advances of vapor-liquid-solid method used for semiconductor nanowire growth
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摘要 气-液-固法(VLS)是目前生长各种准一维纳米结构的主要工艺技术。本文首先介绍了VLS的生长原理,然后以生长机制为主线,着重评论了近3-5年内它在ZnO、GaN、Si以及SiC等纳米线及其阵列合成中应用的某些新进展。最后提出了改进VLS方法的几项措施,并展望了它的今后发展趋势。 At present, vapor - liquid - solid method （VLS） is an important technology used for the fabrications of one - dimensional nanostructures. In this paper, The principle of vapor - liquid - solid method is firstly introduced, then new advances of its applications in the synthesis for various semiconductor nanowires such as ZnO, GaN, Si and SiC are reviewed. Finally, some improved methods are presented and the developed tendency in the future is also indicated.
作者 彭英才 赵新为
机构地区 河北大学电子信息工程学院 中国科学院半导体研究所半导体材料科学重点实验室 日本东京理科大学物理系 中国科学院微电子学研究所纳米材料与纳米器件实验室
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2008年第5期864-870,共7页 Journal of Functional Materials and Devices
关键词 气-液-固法 金属催化剂 纳米线与阵列 生长机制 vapor- liquid -solid method metal catalyst nanowires and arrays growth mechanism
分类号 TN253 [电子电信—物理电子学]
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参考文献33

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功能材料与器件学报
2008年 第5期

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