期刊文献+

Pt/WO_3纳米薄膜的氢敏特性 被引量:2

Gas Sensitivity to H_2 of P_t-WO_3 Thin Film
下载PDF
导出
摘要 用溶胶-凝胶法和磁控溅射法相结合制备了催化剂Pt掺杂的WO3纳米薄膜,通过改变氢气的体积分数、催化剂Pt的含量及热处理温度等实验因素,对Pt/WO3薄膜的氢致变色性能进行了测试;并利用X射线光电子能谱仪(XPS)分析了薄膜的氢敏机理。实验结果表明:先用溶胶-凝胶法制得WO3薄膜,然后再用磁控溅射法在该WO3薄膜上溅射掺杂5%的Pt,制得Pt/WO3双层纳米薄膜,经100℃热处理后,可以获得性能稳定且具有良好氢敏特性的优质薄膜;薄膜能检测的氢气浓度低至0.008%;XPS分析表明,W5+与W6+之间的转换是引起WO3薄膜氢致变色现象的主要原因。 Pt-WO3 thin films have been prepared with Sol-Gel method and DC reactive magnetron sputtering method. By changing the volume fraction of He, the concentration of catalyst(Pt) and the temperature of heat treatment, the hydrogen sensing properties of the gasochromic thin films were tested. And the gasochromic mechanism of tungsten oxide thin films has been analysed with XPS. The results show that, when mass fraction of Pt is 5wt% and the annealed temperature is 100℃ ,the Pt-WO3 thin film has high sensitivity to low volume fraction of H2. It can respond to 0. 008% H2. And the charges transfer between W^5+ and W^6+ is the main reason of WOx film' s gasochromic phenomenon.
出处 《材料科学与工程学报》 CAS CSCD 北大核心 2008年第5期761-764,769,共5页 Journal of Materials Science and Engineering
基金 国家自然科学基金资助项目(10376045) 重庆市自然科学基金资助项目(8418)
关键词 Pt/WO3纳米薄膜 氢敏特性 机理 Pt/WO3 thin film hydrogen-sensing properties mechanism
  • 相关文献

参考文献15

  • 1Kim K, Cho S M. Pd nanowire sensors for hydrogen detection [ R]. Proceedings of the IEEE Sensors 2004, Vienna, Austria, 2004, 705-707.
  • 2陶长元,唐金晶,杜军,孙才新.氢敏材料及氢气传感器的研究进展[J].材料导报,2005,19(2):9-11. 被引量:16
  • 3Stankova M, Vilanova X, Llobet E, et al. Influence of the annealing and operating temperatures on the gas sensing properties of rf sputtered WO3 thin-film sensors[J]. Sensors and Actuators B, 2005, 105(2):271-277.
  • 4Ionescu R, Hoel A, Granqvist C G, et al. low level deteetion of ethanol and H2S with temperature-modulated WO3 nanopartiele gas sensors[J].Sensors and Actuators B, 2005, 104(3) :132-139.
  • 5Ali M, Cimalla V, Lebedev V, et al. Pt/GaN Schottky diodes for hydrogen gas sensors[J]. Sens Actuat. B, 2006, 113:797-804.
  • 6Junghui S, Wu L, Jeffrey S F, et al. AIGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals[J]. Solid-State Electronics, 2005, 49:1330-1334.
  • 7侯长军,范小花,范瑛,唐一科.氢敏材料的研究进展[J].电子元件与材料,2006,25(10):1-5. 被引量:10
  • 8Zhao Z, Capenter M A, Xia H, et al. All-optical hydrogen sensor based on a high alloy content palladium thin film[J].Sens Actuat, B, 2006, 113:532-538.
  • 9Sekimoto S, Nakagawa H, Okazaki S, et al. A fiber optic evanescentwave hydrogen gas sensor using palladium supported tungsten oxide[J].Sens Actuat B, 2002, 66: 142 -145.
  • 10OkazakiS, Nakagawa H, Asakura S, et al. Sensing characteristics of an optical fiber sensor for hydrogen leak[J]. Sens Actuat, B, 2003, 93:142-147.

二级参考文献79

  • 1谷丰 张跃华.[A]..STC,89首届敏感元件与传感器学术会议论文集[C].北京,1989.368.
  • 2Andreas Mandelis, Jose A Garcia. Sensors and Actuators,1998,B49:258.
  • 3Chtanov A, Gal M. Sensors and Actuators,2001,B79:196.
  • 4Maffei N,et al. Sensors and Actuators, 1999,B56:243.
  • 5Koji Katahira, Hirosbige Matsumoto,Hiroyasu Iwahara, et al. Sensors and Actuators, 2001 ,B73:130.
  • 6Jerzy Bodzenta, Boguslaw Burak, Zbigniew Gacek, et al.Sensors and Actuators, 2002, B87: 82.
  • 7Wada K,Eashira M. Ceram Soc Jap,1998,106:84.
  • 8Wada K,Eashira M. Ceram Soc Jap,1998,106:621.
  • 9Wada Kenji, Egashira Makoto. Sensors and Actuators,2000,B62:211.
  • 10Katsuki A,Fukui K. Sensors and Actuators,1998,B52:30.

共引文献27

同被引文献71

引证文献2

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部