溅射SiO_2薄膜动力学分析

Kinetics Analyse of the Sputtering SiO_2 Film

使用蒙特卡罗法模拟了SiO2薄膜的生长过程,并利用沉积中三过程(吸附、扩散、脱附)的速率公式推导分析沉积过程中温度和粒子入射能量对薄膜质量的影响。温度较低时(100℃),薄膜中的空位密度相对较高,随着温度的升高(300℃),薄膜中的空位密度逐渐降低,温度继续升高时,则衬底温度对薄膜致密度的影响趋于平缓,200～300℃下制备的SiO2薄膜其表面质量最优。通过溅射原子能量角分布表达式分析入射靶离子能量决定溅射原子能量大小及其分布,得出Si靶溅射出的原子能量较大,可得质量较好的薄膜。

Study on the SiO2 coating process and analyzed the influence of the working temperature and projectile energy on the surface condition with MonteCarlo to get the best working temperature （200 - 300℃） and the preference of Si target. With the working temperature rising from 100 ℃ to 300℃, the vacancy density decreased and leveled off after 300℃. And due to the higher projectile energy of the Si target calculated by the angular distribution of the projectile particle energy, we can get the high-quality film with Si target.