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用于KDP晶体的桥式聚倍半硅氧烷防潮膜 被引量:2

Moisture-resistant protective film for KDP crystal based on bridged polysilsesquioxane
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摘要 以间苯亚甲基二异氰酸酯与氨丙基三乙氧基硅烷反应制备了具有长桥链结构的聚倍半硅氧烷前驱体,利用制备的前驱体在碱性条件下水解缩聚制备了桥式聚倍半硅氧烷溶胶,并采用提拉浸涂法对磷酸二氢钾(KDP)晶体镀膜。通过1H NMR对前驱体进行结构定性,利用29Si MAS NMR和N2吸附-脱附表征对凝胶结构进行了分析,用AFM对薄膜的表面形貌进行了研究,通过湿度为60%时KDP晶体光学性质的变化考察了薄膜的防潮性能。利用三倍频和基频激光测试了薄膜的抗激光损伤性能。结果表明:这种桥式聚倍半硅氧烷薄膜对KDP晶体具有很好的防潮保护作用,并显示了较好的抗激光损伤性能。 A novel bridged silsesquioxane with long bridging groups was synthesized with m-xylylene diisocyanate and 3- aminopropyltriethoxysilane. Bridged polysilsesquioxane sol was prepared by the sol-gel polycondensaion of as-synthesized bridged silsesquioxane under basic catalysis. Thin film was obtained by dip-coating the bridged polysilsesquioxane sol on the KDP crystal. 1 H NMR was used to characterize the bridged silsesquioxane. ^29 Si MAS NMR and N, absorption/desorption analysis were adopted to study the xerogel structure. The morphology of film was observed by AFM analysis. The moisture-resistance of film under rel- ative humidity 60 % for KDP crystals was studied. The laser-induced damage threshold(LIDT) of bridged polysilsesquioxane film at 355 nm and 1 064 nm was measured. The results show that the bridged polysilsesquioxane film exhibits excellent moisture-resistance for KDP crystal and relative high LIDT.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2008年第9期1474-1478,共5页 High Power Laser and Particle Beams
基金 国家自然科学基金重点项目(20133040)
关键词 桥式聚倍半硅氧烷 防潮膜 磷酸二氢钾 前驱体 Bridged polysilsesquioxane, Moisture-resistant film KDP Precursor
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参考文献12

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