半导体桥电爆过程的能量转换测量与计算

Measurement and Calculation for SCB Electro-explosion Energy Conversion Features

对电容激励模式下半导体桥(SCB)的电流、电压以及光的变化进行了测试,从能量的角度对半导体桥电爆换能过程进行了分析,并对电爆换能过程中硅桥物质形态的变化进行了量化分析,在电容为22μF、充电电压为45 V的情况下,SCB上电压为最低时(2.18μs,10 V)有61.1%的桥区熔化,SCB上电压为最高时(3.48μs,43 V)桥区有14.5%气化,在SCB发火光强最亮时(17.60μs)有70.3%的半导体硅桥电离。

The changes of current,voltage and light intensity of semiconductor bridge （SCB） with discharge time under capacitor energy supply excitation were conducted. The electro-explosion energy conversion processes and phase changes for SCB were analyzed based from the electric energy input and enthalpy change theoretical calculation. Results show that melting ratio,vaporizing ratio and ionizing-ratio of SCB are 61. 1% , 14.5% and 70.3% at 2. 18 μs, 3.48 μs, and 17.60 μs respectively when the capacitance is 22 μF and the charging voltage is 45 V.