Si衬底生长InGaN/GaN多量子阱横断面TEM试样制备及成像分析

THE CROSS SECTION TEM SAMPLE PREPARATION AND IMAGE ANALYSIS OF GaN/InGaN MULTI-QUANTUM WELLS GROWN ON Si SUBSTRATE

文章对Si衬底GAN基GaN/InGaN多量子阱TEM薄膜断面样品制备给予了详细介绍,并对其TEM衍射衬度像、高分辨透射电子显微像及选区电子衍射花样成像条件及其衬度进行了分析。

The article has given the detailed introduction to the cross section sample preparation of Si substrate GAN base GaN/InGaN the multi-quantum-well TEM, and has analyzed its TEM mass-thickness contrast image and the diffraction contrast image, the high resolution electron photomicrograph and the selected area diffraction patterns image formation condition and production mechanism of the contrast.