摘要
介绍了一种超低噪声K波段放大器的设计方法,以高电子迁移率晶体管为基础,采用3级放大拓扑结构,提出了一种改进型的负反馈网络,较好地改善了电路的增益平坦度。利用Agilent公司的微波电路CAD(计算机辅助设计)软件ADS2006对电路原理图及版图进行了仿真设计,最终实现了在工作频段19.5 GHz^21.5 GHz内,噪声系数小于1.5 dB、增益大于30 dB的优异电性能。
This paper discusses the complete design flow of a K-band ultra-low noise amplifier with microwave simulation software ADS2006, including the circuit design, layout design and simulation process etc. This K-band low noise amplifier（LNA） consists of three-stage topological structure based on the HEMT appli- cation. A novel feedback configuration is proposed to improve the performance of the gain curve flatness. In 19.5 GHz -21.5 GHz band, this K-band LNA has good electrical performance, while the maximum noise figure of the K-band LNA was less than 1.5dB and the minimum gain higher than 30dB.
出处
《电子工程师》
2008年第10期40-44,共5页
Electronic Engineer
