磁过滤阴极真空弧法制备纳米nc-ZrCN/a-C:H(N)复合膜

NANOCOMPOSITE nc-ZrCN/a-C:H(N) FILM SYNTHESIZED BY FILTERED CATHODIC VACUUM ARC TECHNIQUE

采用磁过滤阴极真空弧法,以C2H2和N2混合气体为反应气体在单晶硅上沉积纳米nc-ZrCN/a-C:H(N)复合膜,用X射线衍射(XRD)、扫描电镜的能谱仪(SEM-EDS)和X射线电子能谱(XPS)研究了薄膜的成分和结构.实验结果表明薄膜结构是由ZrCN晶粒镶嵌在无定形碳和碳氮化合物基体中;膜中的化合键主要以Zr—C,C C(sp2)和C—C(sp3)形式存在;随着混合气体流量的增加,薄膜的锆原子分数减小,而N和C的原子分数逐渐增大.

Nanocomposite nc-ZrCN/a-C. H （N） films were prepared on silicon substrates by filtered cathodic vacuum arc technique using CeH2and N2 gases as precursores. Microstructure and composition of nanocomposite nc-ZrCN/a-C： H （N） films were investigated by X-ray diffraction （XRD）, scanning electron microscope-energy dispersive spectrdmeter（SEM-EDS） and X-ray photoelectron spectroscopy（XPS）. It was revealed that the film was constituted mainly by Zr-C, C =C（sp2） and C-C（sp3） bonds; structure of the films was crystalline ZrCN embedded in an amorphous carbon and carbonitride matrix. With increasing flow rate, film Zr content decreased, but C and N contents increased.